8550QLT1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8550QLT1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar 8550QLT1
8550QLT1
Datasheet (PDF)
..1. Size:412K willas
8550plt1 8550qlt1 8550rlt1.pdf 
FM120-M WILLAS8550xLT1THRUGeneral Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board
0.1. Size:234K lrc
l8550plt1g l8550qlt1g l8550rlt1g l8550slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.2. Size:202K lrc
l8550qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.3. Size:138K lrc
lh8550plt1g lh8550plt3g lh8550qlt1g lh8550qlt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.4. Size:234K lrc
l8550plt1g l8550plt3g l8550qlt1g l8550qlt3g l8550rlt1g l8550rlt3g l8550slt1g l8550slt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.5. Size:138K lrc
lh8550qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.6. Size:138K lrc
lh8550plt1g lh8550qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
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