Биполярный транзистор 8550QLT1
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 8550QLT1
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.8
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора:
SOT-23
Аналоги (замена) для 8550QLT1
8550QLT1
Datasheet (PDF)
..1. Size:412K willas
8550plt1 8550qlt1 8550rlt1.pdf 
FM120-M WILLAS8550xLT1THRUGeneral Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board
0.1. Size:234K lrc
l8550plt1g l8550qlt1g l8550rlt1g l8550slt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.2. Size:202K lrc
l8550qlt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.3. Size:138K lrc
lh8550plt1g lh8550plt3g lh8550qlt1g lh8550qlt3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.4. Size:234K lrc
l8550plt1g l8550plt3g l8550qlt1g l8550qlt3g l8550rlt1g l8550rlt3g l8550slt1g l8550slt3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.5. Size:138K lrc
lh8550qlt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.6. Size:138K lrc
lh8550plt1g lh8550qlt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
