2N6056 Datasheet. Equivalente

 ..1. Size:209K  motorola
 2n6055 2n6056.pdf

Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary 2N6056* Silicon Power Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low frequency switching applications. DARLINGTON High DC Current Gain 8 AMPERE hFE = 3000 (Typ) @ IC = 4.0 Adc COMPLEMENTARY Collector Emitter Sustai

 ..2. Size:195K  inchange semiconductor
 2n6056.pdf

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@I = 4.0A CE (sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to type 2N6054 Minimum Lot-to-Lot variations for robust device performance and reliable operation A

 ..3. Size:132K  inchange semiconductor
 2n6055 2n6056.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6053;2N6054 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy

 9.1. Size:275K  motorola
 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc Collector Emitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (

 9.2. Size:42K  st
 2n6059.pdf

2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mount

 9.3. Size:132K  onsemi
 2n6052g.pdf

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low frequency switching applications. Features http //onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc 12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit

 9.4. Size:159K  comset
 2n6055-2n6053.pdf

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Volta

 9.5. Size:217K  comset
 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

 9.6. Size:172K  mospec
 2n6053-56.pdf

A A A A

 9.7. Size:195K  bocasemi
 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf

A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

 9.8. Size:109K  jmnic
 2n6058 2n6059.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION With TO-3 package High gain High current High dissipation Complement to type 2N5883/2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline

 9.9. Size:251K  inchange semiconductor
 2n6059.pdf

isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 300 (Min) @ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching

 9.10. Size:131K  inchange semiconductor
 2n6053 2n6054.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T

 9.11. Size:195K  inchange semiconductor
 2n6054.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage V = -2.0V(Max)@ I = -4A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to type 2N6056 Minimum Lot-to-Lot variations for robust device performance and reliable operation

 9.12. Size:105K  inchange semiconductor
 2n6057.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONS Designed for general purpose amplifier and low frequency switching ap

 9.13. Size:184K  inchange semiconductor
 2n6052.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -6A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

 9.14. Size:131K  inchange semiconductor
 2n6058 2n6059.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION With TO-3 package High current ;high dissipation DARLINGTON Complement to type 2N5883;2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-