2N6056 Todos los transistores

 

2N6056 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6056

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6056

 

2N6056 Datasheet (PDF)

1.1. 2n6055 2n6056.pdf Size:209K _motorola

2N6056
2N6056

Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary 2N6056* Silicon Power Transistors *Motorola Preferred Device . . . designed for generalpurpose amplifier and low frequency switching applications. DARLINGTON High DC Current Gain 8 AMPERE hFE = 3000 (Typ) @ IC = 4.0 Adc COMPLEMENTARY CollectorEmitter Sustaining Voltage

1.2. 2n6055 2n6056.pdf Size:132K _inchange_semiconductor

2N6056
2N6056

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbo

 5.1. 2n6052g.pdf Size:132K _upd

2N6056
2N6056

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc 12 AMPERE • Collector-Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON • Monolit

5.2. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:275K _motorola

2N6056
2N6056

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for generalpurpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (Min) 2N6050,

 5.3. 2n6059.pdf Size:42K _st

2N6056
2N6056

2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted i

5.4. 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf Size:217K _comset

2N6056
2N6056

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABS

 5.5. 2n6055-2n6053.pdf Size:159K _comset

2N6056
2N6056

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Voltage

5.6. 2n6053-56.pdf Size:172K _mospec

2N6056
2N6056

A A A A

5.7. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:195K _bocasemi

2N6056
2N6056

A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.8. 2n6058 2n6059.pdf Size:109K _jmnic

2N6056
2N6056

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (T

5.9. 2n6052.pdf Size:72K _inchange_semiconductor

2N6056
2N6056

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6059 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching ap

5.10. 2n6058 2n6059.pdf Size:131K _inchange_semiconductor

2N6056
2N6056

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

5.11. 2n6053 2n6054.pdf Size:131K _inchange_semiconductor

2N6056
2N6056

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

5.12. 2n6057.pdf Size:105K _inchange_semiconductor

2N6056
2N6056

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching appli

5.13. 2n6059.pdf Size:175K _inchange_semiconductor

2N6056
2N6056

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Complement to type 2N6052 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching app

Otros transistores... 2N604A , 2N605 , 2N6050 , 2N6051 , 2N6052 , 2N6053 , 2N6054 , 2N6055 , BC639 , 2N6057 , 2N6058 , 2N6059 , 2N606 , 2N6060 , 2N6061 , 2N6062 , 2N6063 .

 
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