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HBC847 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HBC847
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: SOT-23
 

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HBC847 Datasheet (PDF)

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HBC847

Spec. No. : HE6827HI-SINCERITYIssued Date : 1993.11.28Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HBC847NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HBC847 is designed for switching and AF amplifier amplification suitable forautomatic insertion in thick and thin-film circuits.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.

 0.1. Size:250K  cystek
hbc8471s6r.pdf pdf_icon

HBC847

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 0.2. Size:251K  cystek
hbc8472s6r.pdf pdf_icon

HBC847

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 9.1. Size:66K  hsmc
hbc848.pdf pdf_icon

HBC847

Spec. No. : HE6843 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2008.01.30 MICROELECTRONICS CORP. Page No. : 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: P303A | KT918A | KT918B | GT122B | NTE2343 | KRX202U | 40422

 

 
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