HBC847 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HBC847 Specs and Replacement

Type Designator: HBC847

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: SOT-23

HBC847 Substitution

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HBC847 datasheet

..1. Size:38K hsmc

hbc847.pdf pdf_icon

Spec. No. HE6827 HI-SINCERITY Issued Date 1993.11.28 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.... See More ⇒

0.1. Size:250K cystek

hbc8471s6r.pdf pdf_icon

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.... See More ⇒

0.2. Size:251K cystek

hbc8472s6r.pdf pdf_icon

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.... See More ⇒

9.1. Size:66K hsmc

hbc848.pdf pdf_icon

Spec. No. HE6843 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2008.01.30 MICROELECTRONICS CORP. Page No. 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag... See More ⇒

Detailed specifications: H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , HA8550S , HBC517 , TIP42C , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 , HBF423 , HD122 , HE8050 .