All Transistors. HBC847 Datasheet

 

HBC847 Datasheet and Replacement


   Type Designator: HBC847
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT-23
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HBC847 Datasheet (PDF)

 ..1. Size:38K  hsmc
 hbc847.pdf pdf_icon

HBC847

Spec. No. : HE6827HI-SINCERITYIssued Date : 1993.11.28Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HBC847NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HBC847 is designed for switching and AF amplifier amplification suitable forautomatic insertion in thick and thin-film circuits.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.

 0.1. Size:250K  cystek
 hbc8471s6r.pdf pdf_icon

HBC847

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 0.2. Size:251K  cystek
 hbc8472s6r.pdf pdf_icon

HBC847

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 9.1. Size:66K  hsmc
 hbc848.pdf pdf_icon

HBC847

Spec. No. : HE6843 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2008.01.30 MICROELECTRONICS CORP. Page No. : 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

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