HM42 Todos los transistores

 ..1. Size:37K  hsmc
 hm42.pdf

Spec. No. HE9510 HI-SINCERITY Issued Date 1998.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/4 HM42 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-89 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............

 0.1. Size:562K  international rectifier
 irfhm4226.pdf

FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (

 0.2. Size:574K  international rectifier
 irfhm4231.pdf

FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4 (@ VGS = 10V) m (@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (

 0.3. Size:581K  international rectifier
 irfhm4234.pdf

FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G (@ VGS = 10V) m D 6 3 S (@ VGS = 4.5V) 7.1 D 7 2 S Qg (typical) 8.2 nC D 8 1 S ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching

 0.4. Size:131K  chenmko
 chm4269jgp.pdf

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 6.1 Ampere P-channel VOLTAGE 40 Volts CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low

 0.5. Size:196K  chenmko
 chm4228jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4228JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

 0.6. Size:101K  chenmko
 chm4204pagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4204PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 24 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

 0.7. Size:113K  chenmko
 chm4282jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4282JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High sat

 0.8. Size:62K  chenmko
 chm4201pagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4201PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High

 0.9. Size:119K  chenmko
 chm4269pa4gp.pdf

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269PA4GP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 14 Ampere P-channel VOLTAGE 40 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252-4 FEATURE * Small flat package. (TO-252-4) .280 (7.10) .094 (2.40) * Super high dense c

 0.10. Size:689K  cn hmsemi
 hm4264b.pdf

HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

 0.11. Size:524K  cn hmsemi
 hm4264.pdf

HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

 0.12. Size:878K  cn hmsemi
 hm4240.pdf

HM4240 N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =20A RDS(ON)

 0.13. Size:840K  cn hmsemi
 hm4260.pdf

HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)