HM42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : HE9510HI-SINCERITYIssued Date : 1998.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/4HM42NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM42 is designed for application as a video output to drive color CRT, or as adialer circuit in electronics telephone.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ............

FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (

FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4(@ VGS = 10V) m(@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (

FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G(@ VGS = 10V) mD 6 3 S(@ VGS = 4.5V) 7.1 D 7 2 SQg (typical) 8.2 nC D 8 1 SID 60 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 6.1 AmpereP-channel: VOLTAGE 40 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low

CHENMKO ENTERPRISE CO.,LTDCHM4228JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

CHENMKO ENTERPRISE CO.,LTDCHM4204PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 24 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM4282JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat

CHENMKO ENTERPRISE CO.,LTDCHM4201PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 40 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269PA4GPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 14 AmpereP-channel: VOLTAGE 40 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.TO-252-4FEATURE* Small flat package. (TO-252-4).280 (7.10).094 (2.40)* Super high dense c

HM4264BN-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

HM4240N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =20A RDS(ON)

HM4260N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)