HM42 datasheet, аналоги, основные параметры
Наименование производителя: HM42 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: SOT-89
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Аналоги (замена) для HM42
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HM42 даташит
..1. Size:37K hsmc
hm42.pdf 
Spec. No. HE9510 HI-SINCERITY Issued Date 1998.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/4 HM42 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-89 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............
0.1. Size:562K international rectifier
irfhm4226.pdf 
FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (
0.2. Size:574K international rectifier
irfhm4231.pdf 
FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4 (@ VGS = 10V) m (@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (
0.3. Size:581K international rectifier
irfhm4234.pdf 
FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G (@ VGS = 10V) m D 6 3 S (@ VGS = 4.5V) 7.1 D 7 2 S Qg (typical) 8.2 nC D 8 1 S ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching
0.4. Size:131K chenmko
chm4269jgp.pdf 
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 6.1 Ampere P-channel VOLTAGE 40 Volts CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low
0.5. Size:196K chenmko
chm4228jgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHM4228JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an
0.6. Size:101K chenmko
chm4204pagp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHM4204PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 24 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
0.7. Size:113K chenmko
chm4282jgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHM4282JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High sat
0.8. Size:62K chenmko
chm4201pagp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHM4201PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High
0.9. Size:119K chenmko
chm4269pa4gp.pdf 
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269PA4GP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 14 Ampere P-channel VOLTAGE 40 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252-4 FEATURE * Small flat package. (TO-252-4) .280 (7.10) .094 (2.40) * Super high dense c
0.10. Size:689K cn hmsemi
hm4264b.pdf 
HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)
0.11. Size:524K cn hmsemi
hm4264.pdf 
HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)
0.12. Size:878K cn hmsemi
hm4240.pdf 
HM4240 N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =20A RDS(ON)
0.13. Size:840K cn hmsemi
hm4260.pdf 
HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)
Другие транзисторы: HLB123T, HLB124E, HLB125HE, HM112, HM117, HM2222A, HM2907A, HM3669, 2SC2240, HM44, HM5401, HM5551, HM669A, HM6718, HM772, HM772A, HM882
