HM94 Datasheet. Equivalente

 ..1. Size:37K  hsmc
 hm94.pdf

Spec. No. HE9525 HI-SINCERITY Issued Date 1998.01.06 Revised Date 2005.05.19 MICROELECTRONICS CORP. Page No. 1/4 HM94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM94 is designed for application requires high voltage. SOT-89 Features High voltage VCEO=400V(min) at IC=1mA High current gain IC=300mA at 25 C Complementary with HM44 Absolute Maximum Ratings

 0.1. Size:110K  chenmko
 chm9435azgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SO-8 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+0

 0.2. Size:338K  chenmko
 chm9435gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small flat package. (SOT-23) * Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1) (

 0.3. Size:101K  chenmko
 chm9410jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9410JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and relia

 0.4. Size:77K  chenmko
 chm9424jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9424JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 7.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and rel

 0.5. Size:82K  chenmko
 chm9407ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9407AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High powe

 0.6. Size:102K  chenmko
 chm9436ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9436AJGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and re

 0.7. Size:91K  chenmko
 chm9433jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9433JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 0.8. Size:103K  chenmko
 chm9435ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and re

 0.9. Size:107K  chenmko
 chm9407azgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9407AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0

 0.10. Size:862K  cn hmsemi
 hm9436.pdf

P-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -7A RDS(ON)

 0.11. Size:435K  cn hmsemi
 hm9435.pdf

HM9435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 0.12. Size:572K  cn hmsemi
 hm9435a.pdf

HM9435A P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 0.13. Size:676K  cn hmsemi
 hm9435b.pdf

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)