HM94 Datasheet and Replacement

Spec. No. : HE9525HI-SINCERITYIssued Date : 1998.01.06Revised Date : 2005.05.19MICROELECTRONICS CORP.Page No. : 1/4HM94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM94 is designed for application requires high voltage.SOT-89Features High voltage: VCEO=400V(min) at IC=1mA High current gain: IC=300mA at 25C Complementary with HM44Absolute Maximum Ratings

CHENMKO ENTERPRISE CO.,LTDCHM9435AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SO-8 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.0+0

CHENMKO ENTERPRISE CO.,LTDCHM9435GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23)* Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1)(

CHENMKO ENTERPRISE CO.,LTDCHM9410JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and relia

CHENMKO ENTERPRISE CO.,LTDCHM9424JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 7.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and rel

CHENMKO ENTERPRISE CO.,LTDCHM9407AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe

CHENMKO ENTERPRISE CO.,LTDCHM9436AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

CHENMKO ENTERPRISE CO.,LTDCHM9433JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

CHENMKO ENTERPRISE CO.,LTDCHM9435AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

CHENMKO ENTERPRISE CO.,LTDCHM9407AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -7A RDS(ON)

HM9435P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

HM9435AP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)