HMBT2369 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMBT2369
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4.5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 500 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar HMBT2369
HMBT2369 Datasheet (PDF)
hmbt2369.pdf
Spec. No. : HE6834HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2369 is designed for general purpose switching and amplifierapplications.SOT-23Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximu
hmbt2222a.pdf
Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs
hmbt2907a.pdf
Spec. No. : HE6821HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.08.30MICROELECTRONICS CORP.Page No. : 1/4HMBT2907APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2907A is designed for general purpose amplifier and high -speedswitching, medium power switching applications.SOT-23Features Low Collector Saturation Voltage High Speed Switching For C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .