HMBT2369 Datasheet. Specs and Replacement

Type Designator: HMBT2369  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT-23

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HMBT2369 datasheet

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HMBT2369

Spec. No. HE6834 HI-SINCERITY Issued Date 1998.02.01 Revised Date 2004.09.07 MICROELECTRONICS CORP. Page No. 1/4 HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications. SOT-23 Features Low Collector Saturation Voltage High speed switching Transistor Absolute Maximum Ratings Maximu... See More ⇒

 9.1. Size:51K  hsmc

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HMBT2369

Spec. No. HE6822 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2010.08.06 MICROELECTRONICS CORP. Page No. 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs... See More ⇒

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HMBT2369

Spec. No. HE6821 HI-SINCERITY Issued Date 1993.06.23 Revised Date 2004.08.30 MICROELECTRONICS CORP. Page No. 1/4 HMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT2907A is designed for general purpose amplifier and high -speed switching, medium power switching applications. SOT-23 Features Low Collector Saturation Voltage High Speed Switching For C... See More ⇒

 9.3. Size:662K  cn haohai electr

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HMBT2369

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Detailed specifications: HM772A, HM882, HM92, HM94, HM965, HMBT1015, HMBT1815, HMBT2222A, D882P, HMBT2907A, HMBT3904, HMBT3906, HMBT4401, HMBT4403, HMBT5401, HMBT5551, HMBT6427

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