HMBT2369 Datasheet, Equivalent, Cross Reference Search
Type Designator: HMBT2369
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT-23
HMBT2369 Transistor Equivalent Substitute - Cross-Reference Search
HMBT2369 Datasheet (PDF)
hmbt2369.pdf
Spec. No. : HE6834HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2369 is designed for general purpose switching and amplifierapplications.SOT-23Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximu
hmbt2222a.pdf
Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs
hmbt2907a.pdf
Spec. No. : HE6821HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.08.30MICROELECTRONICS CORP.Page No. : 1/4HMBT2907APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2907A is designed for general purpose amplifier and high -speedswitching, medium power switching applications.SOT-23Features Low Collector Saturation Voltage High Speed Switching For C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
