HMBT6427 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMBT6427
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 20000
Encapsulados: SOT-23
Búsqueda de reemplazo de HMBT6427
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HMBT6427 datasheet
hmbt6427.pdf
Spec. No. HE6846 HI-SINCERITY Issued Date 1995.07.21 Revised Date 2004.08.31 MICROELECTRONICS CORP. Page No. 1/4 HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature................................................................................................................
hmbt6517.pdf
Spec. No. HE6836 HI-SINCERITY Issued Date 1994.07.20 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages. Features SOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H
hmbt6520.pdf
Spec. No. HE6806 HI-SINCERITY Issued Date 1996.04.10 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. Features SOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H
Otros transistores... HMBT2369 , HMBT2907A , HMBT3904 , HMBT3906 , HMBT4401 , HMBT4403 , HMBT5401 , HMBT5551 , BD222 , HMBT6517 , HMBT6520 , HMBT8050 , HMBT8550 , HMBTA06 , HMBTA13 , HMBTA14 , HMBTA42 .
History: HMBT5551
History: HMBT5551
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