HMBTA13
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMBTA13
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar HMBTA13
HMBTA13
Datasheet (PDF)
..1. Size:36K hsmc
hmbta13.pdf
Spec. No. : HE6842HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA13NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
8.1. Size:37K hsmc
hmbta14.pdf
Spec. No. : HE6841HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HMBTA14NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
9.1. Size:38K hsmc
hmbta94.pdf
Spec. No. : HN200209HI-SINCERITYIssued Date : 2000.11.01Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA94 is designed for application that requires high voltage.SOT-23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44Absolute Maximum Ratings Maximum Temp
9.2. Size:37K hsmc
hmbta44.pdf
Spec. No. : HN200208HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA44 is designed for application requires high voltage.FeaturesSOT-23 High voltage: VCEO=400V(min) at IC=1mA High current: IC=300mA at 25C Complementary with HMBTA94Absolute Maximum R
9.3. Size:36K hsmc
hmbta42.pdf
Spec. No. : HE6848HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA42NPN EPITACIAL PLANAR TRANSISTORDescriptionHigh Voltage TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...............................................................................................................
9.4. Size:37K hsmc
hmbta06.pdf
Spec. No. : HE6840HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.16MICROELECTRONICS CORP.Page No. : 1/4HMBTA06NPN SILICON TRANSISTORDescriptionAmplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...........................................................................................................................
9.5. Size:36K hsmc
hmbta92.pdf
Spec. No. : HE6845HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBTA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA92 is designed for application as a video output to drive color CRT, or asa dialer circuit in electronics telephone.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......
9.6. Size:238K cn haohai electr
hmbta44.pdf
HMBTA44NPN-TRANSISTORNPN, 200mA, 400V NPN HMBTA44NPN High Voltage Transistor SMDHMBTA44LT1NPN, BECHigh breakdown voltageGeneral Purpose TransistorsLow collector-emitter saturation voltageComplementary to HMBTA94A44Transistor Polarity: NPNMMBTA
9.7. Size:256K cn haohai electr
hmbta42.pdf
HMBTA42NPN-TRANSISTORNPN, 500mA, 300V NPN HMBTA42NPN High Voltage Transistor SMDHMBTA42LT1NPN, BECHigh breakdown voltageGeneral Purpose TransistorsLow collector-emitter saturation voltageComplementary to HMBTA92A42Transistor Polarity: NPNMMBTA
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