Биполярный транзистор HMBTA13 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: HMBTA13
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 125 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: SOT-23
HMBTA13 Datasheet (PDF)
hmbta13.pdf
Spec. No. : HE6842HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA13NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
hmbta14.pdf
Spec. No. : HE6841HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HMBTA14NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
hmbta94.pdf
Spec. No. : HN200209HI-SINCERITYIssued Date : 2000.11.01Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA94 is designed for application that requires high voltage.SOT-23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44Absolute Maximum Ratings Maximum Temp
hmbta44.pdf
Spec. No. : HN200208HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA44 is designed for application requires high voltage.FeaturesSOT-23 High voltage: VCEO=400V(min) at IC=1mA High current: IC=300mA at 25C Complementary with HMBTA94Absolute Maximum R
hmbta42.pdf
Spec. No. : HE6848HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA42NPN EPITACIAL PLANAR TRANSISTORDescriptionHigh Voltage TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...............................................................................................................
hmbta06.pdf
Spec. No. : HE6840HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.16MICROELECTRONICS CORP.Page No. : 1/4HMBTA06NPN SILICON TRANSISTORDescriptionAmplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...........................................................................................................................
hmbta92.pdf
Spec. No. : HE6845HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBTA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA92 is designed for application as a video output to drive color CRT, or asa dialer circuit in electronics telephone.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
