HMBTA14 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMBTA14 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 20000
Encapsulados: SOT-23
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HMBTA14 datasheet
hmbta14.pdf
Spec. No. HE6841 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................................................................................
hmbta13.pdf
Spec. No. HE6842 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................................................................................
hmbta94.pdf
Spec. No. HN200209 HI-SINCERITY Issued Date 2000.11.01 Revised Date 2004.08.17 MICROELECTRONICS CORP. Page No. 1/4 HMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBTA94 is designed for application that requires high voltage. SOT-23 Features High Breakdown Voltage VCEO=400(Min.) at IC=1mA Complementary to HMBTA44 Absolute Maximum Ratings Maximum Temp
hmbta44.pdf
Spec. No. HN200208 HI-SINCERITY Issued Date 1993.06.23 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features SOT-23 High voltage VCEO=400V(min) at IC=1mA High current IC=300mA at 25 C Complementary with HMBTA94 Absolute Maximum R
Otros transistores... HMBT5551, HMBT6427, HMBT6517, HMBT6520, HMBT8050, HMBT8550, HMBTA06, HMBTA13, 2N5551, HMBTA42, HMBTA44, HMBTA92, HMBTA94, HMBTH10, HMJE13001, HMJE13003, HMJE13003D
Parámetros del transistor bipolar y su interrelación.
History: PN5128 | 2SC5139
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