HSD1609S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSD1609S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Capacitancia de salida (Cc): 3.8 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO-92
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HSD1609S datasheet
hsd1609s.pdf
Spec. No. HE6515 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.15 MICROELECTRONICS CORP. Page No. 1/5 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................
hsd1609.pdf
Spec. No. HE6606 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSB1109 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..............................................
hsd1616a.pdf
Spec. No. HE6534 HI-SINCERITY Issued Date 1998.06.01 Revised Date 2003.05.03 MICROELECTRONICS CORP. Page No. 1/5 HSD1616A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1616A is designed for audio frequency power amplifier and medium speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................
Otros transistores... HSB772 , HSB772S , HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , BC546 , HSD1616A , HSD313 , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 .
History: 2SD1354O | 2SD1355O
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