HSD1609S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSD1609S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 3.8 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar HSD1609S
HSD1609S Datasheet (PDF)
hsd1609s.pdf
Spec. No. : HE6515HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/5HSD1609SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1609S is designed for low frequency high voltage amplifier applications,complementary pair with HSB1109S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................
hsd1609.pdf
Spec. No. : HE6606HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSD1609NPN EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSB1109TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................
hsd1616a.pdf
Spec. No. : HE6534HI-SINCERITYIssued Date : 1998.06.01Revised Date : 2003.05.03MICROELECTRONICS CORP.Page No. : 1/5HSD1616ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1616A is designed for audio frequency power amplifier and mediumspeed switching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
