HSD1609S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSD1609S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.8 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO-92

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HSD1609S Datasheet (PDF)

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hsd1609s.pdf

Spec. No. : HE6515HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/5HSD1609SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1609S is designed for low frequency high voltage amplifier applications,complementary pair with HSB1109S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................

7.1. Size:44K hsmc
hsd1609.pdf

Spec. No. : HE6606HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSD1609NPN EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSB1109TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................

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hsd1616a.pdf

Spec. No. : HE6534HI-SINCERITYIssued Date : 1998.06.01Revised Date : 2003.05.03MICROELECTRONICS CORP.Page No. : 1/5HSD1616ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1616A is designed for audio frequency power amplifier and mediumspeed switching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050