HSD1609S Specs and Replacement
Type Designator: HSD1609S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-92
HSD1609S Substitution
- BJT ⓘ Cross-Reference Search
HSD1609S datasheet
Spec. No. HE6515 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.15 MICROELECTRONICS CORP. Page No. 1/5 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................... See More ⇒
Spec. No. HE6606 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSB1109 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................................. See More ⇒
Spec. No. HE6534 HI-SINCERITY Issued Date 1998.06.01 Revised Date 2003.05.03 MICROELECTRONICS CORP. Page No. 1/5 HSD1616A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1616A is designed for audio frequency power amplifier and medium speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature .................................. See More ⇒
Detailed specifications: HSB772, HSB772S, HSB857, HSB857D, HSB857J, HSC1815, HSC945, HSD1609, BC546, HSD1616A, HSD313, HSD468, HSD667A, HSD669A, HSD669AT, HSD879, HSD882
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