HSD1609S Datasheet, Equivalent, Cross Reference Search
Type Designator: HSD1609S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-92
HSD1609S Transistor Equivalent Substitute - Cross-Reference Search
HSD1609S Datasheet (PDF)
hsd1609s.pdf
Spec. No. : HE6515HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/5HSD1609SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1609S is designed for low frequency high voltage amplifier applications,complementary pair with HSB1109S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................
hsd1609.pdf
Spec. No. : HE6606HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSD1609NPN EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSB1109TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................
hsd1616a.pdf
Spec. No. : HE6534HI-SINCERITYIssued Date : 1998.06.01Revised Date : 2003.05.03MICROELECTRONICS CORP.Page No. : 1/5HSD1616ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1616A is designed for audio frequency power amplifier and mediumspeed switching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
