HSD669AT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSD669AT  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-126

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HSD669AT datasheet

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HSD669AT

Spec. No. H200901 HI-SINCERITY Issued Date 2009.02.20 Revised Date MICROELECTRONICS CORP. Page No. 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .........................................................

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HSD669AT

Spec. No. HE6630 HI-SINCERITY Issued Date 1995.12.18 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature............................................................

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HSD669AT

Spec. No. HE6510 HI-SINCERITY Issued Date 1996.07.15 Revised Date 2004.08.16 MICROELECTRONICS CORP. Page No. 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ..................................................................................

Otros transistores... HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, HSD669A, TIP127, HSD879, HSD882, HSD882S, HSD965, HT112, HT117, HT772, HT882