HSD669AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSD669AT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 14 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO-126
Búsqueda de reemplazo de transistor bipolar HSD669AT
HSD669AT Datasheet (PDF)
hsd669at.pdf
Spec. No. H200901 HI-SINCERITY Issued Date 2009.02.20 Revised Date MICROELECTRONICS CORP. Page No. 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .........................................................
hsd669a.pdf
Spec. No. HE6630 HI-SINCERITY Issued Date 1995.12.18 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature............................................................
hsd667a.pdf
Spec. No. HE6510 HI-SINCERITY Issued Date 1996.07.15 Revised Date 2004.08.16 MICROELECTRONICS CORP. Page No. 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ..................................................................................
Otros transistores... HSC945 , HSD1609 , HSD1609S , HSD1616A , HSD313 , HSD468 , HSD667A , HSD669A , TIP127 , HSD879 , HSD882 , HSD882S , HSD965 , HT112 , HT117 , HT772 , HT882 .
History: BDX40-7
History: BDX40-7
Liste
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