BD240CBP Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD240CBP
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 115 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO-220
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BD240CBP datasheet
bd239c bd240c.pdf
BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3 The PNP complementary type is BD240C. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb
bd240c.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C (BPL) TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNI
bd240 bd240a bd240b bd240c.pdf
isc Silicon PNP Power Transistor BD240/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.2A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BD240; -60V(Min)- BD240A CEO(SUS) -80V(Min)- BD240B; -100V(Min)- BD240C Complement to Type BD239/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium
Otros transistores... CSC2562Y, CSC3039, CSD73, CSD73O, CSD73Y, P2N2222, P2N2907, SJE1349, BD222, BF469, C13003, C2688BPL, C42C2, C43C2, C44C11, C44C8, C44VH10
History: CSC2562
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