BD240CBP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD240CBP
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 115 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-220
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BD240CBP Datasheet (PDF)
bd239c bd240c.pdf

BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb
bd240c.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C(BPL)TO-220Complementary Silicon transistor Intended For A Wide Variety Of Switching & AmplifierApplications,Series And Shunt Regulators, Driver And Output Stages of HI-FI AmplifiersABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNI
bd240 bd240a bd240b bd240c.pdf

isc Silicon PNP Power Transistor BD240/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.2AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD240; -60V(Min)- BD240ACEO(SUS)-80V(Min)- BD240B; -100V(Min)- BD240CComplement to Type BD239/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: ZTX302M | NSVF4009SG4
History: ZTX302M | NSVF4009SG4



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