BD240CBP Specs and Replacement

Type Designator: BD240CBP

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 115 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-220

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BD240CBP datasheet

 8.1. Size:79K  st

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BD240CBP

BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3 The PNP complementary type is BD240C. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb... See More ⇒

 8.2. Size:132K  cdil

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BD240CBP

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C (BPL) TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNI... See More ⇒

 8.3. Size:212K  inchange semiconductor

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BD240CBP

isc Silicon PNP Power Transistor BD240/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.2A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BD240; -60V(Min)- BD240A CEO(SUS) -80V(Min)- BD240B; -100V(Min)- BD240C Complement to Type BD239/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium... See More ⇒

Detailed specifications: CSC2562Y, CSC3039, CSD73, CSD73O, CSD73Y, P2N2222, P2N2907, SJE1349, BD222, BF469, C13003, C2688BPL, C42C2, C43C2, C44C11, C44C8, C44VH10

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