BD240CBP Datasheet, Equivalent, Cross Reference Search
Type Designator: BD240CBP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-220
BD240CBP Transistor Equivalent Substitute - Cross-Reference Search
BD240CBP Datasheet (PDF)
bd239c bd240c.pdf
BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb
bd240c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C(BPL)TO-220Complementary Silicon transistor Intended For A Wide Variety Of Switching & AmplifierApplications,Series And Shunt Regulators, Driver And Output Stages of HI-FI AmplifiersABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNI
bd240 bd240a bd240b bd240c.pdf
isc Silicon PNP Power Transistor BD240/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.2AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD240; -60V(Min)- BD240ACEO(SUS)-80V(Min)- BD240B; -100V(Min)- BD240CComplement to Type BD239/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
