CMBT2369 Todos los transistores

 

CMBT2369 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMBT2369

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4.5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT-23

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CMBT2369 datasheet

 ..1. Size:215K  cdil
cmbt2369.pdf pdf_icon

CMBT2369

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N P N transistor Marking PACKAGE OUTLINE DETAILS CMBT2369 = lJ ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter

 9.1. Size:75K  rectron
cmbt2222a.pdf pdf_icon

CMBT2369

CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total

 9.2. Size:79K  rectron
cmbt2907.pdf pdf_icon

CMBT2369

CMBT2907 PNP Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit mm SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL CMBT2907 CMBT2907A UNITS DESCRIPTION -VCEO Collector Emitter Voltage 40 60 Collector Base Voltage -VCBO 60 60 V -VEBO Emitter Base Voltage 5.0 5.0 -IC 600 mA Collector

 9.3. Size:135K  cdil
cmbt200.pdf pdf_icon

CMBT2369

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A PIN CONFIGURATION (PNP) 1 = BASE SOT23 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 Designed for General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted) DESCRIPTION SYMBOL VALUE UNIT

Otros transistores... CLD863 , CMBA847E , CMBA847F , CMBA847G , CMBA857E , CMBA857F , CMBT200 , CMBT200A , S9013 , CMBT2484 , CMBT4123 , CMBT4124 , CMBT4125 , CMBT4126 , CMBT4401 , CMBT4403 , CMBT5087 .

History: CMBA857E

 

 

 


History: CMBA857E

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