CMBT5550 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMBT5550
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de transistor bipolar CMBT5550

CMBT5550 Datasheet (PDF)

..1. Size:162K cdil
cmbt5550.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5550SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5550 = 1FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter voltage

7.1. Size:324K cdil
cmbt5551.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5551SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5551 = G1Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 180 VCollectoremitter voltage

9.1. Size:221K cdil
cmbt5088 89.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5088CMBT5089NPN SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsPACKAGE OUTLINE DETAILSMarking ALL DIMENSIONS IN mmCMBT5088 = 1QCMBT5089 = 1RPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS5088 5089Colle

9.2. Size:162K cdil
cmbt5401.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt

9.3. Size:162K cdil
cmbt5400.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5400HIGH VOLTAGE TRANSISTORPNP transistorMarkingCMBT5400 = K2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 130 VCollectoremitter voltage (open base) V

9.4. Size:145K cdil
cmbt5087.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5087SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorMarkingCMBT5087= 2QPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollector-base voltage (open emitter) VCBO max. 50 VCollector-emitter voltage (open base) VCEO ma

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N3594 | 2N2958 | RN2104FS | NB013EI | 2N4086

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050