CMBT5550 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMBT5550
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar CMBT5550
CMBT5550 Datasheet (PDF)
cmbt5550.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5550SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5550 = 1FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter voltage
cmbt5551.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5551SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5551 = G1Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 180 VCollectoremitter voltage
cmbt5088 89.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5088CMBT5089NPN SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsPACKAGE OUTLINE DETAILSMarking ALL DIMENSIONS IN mmCMBT5088 = 1QCMBT5089 = 1RPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS5088 5089Colle
cmbt5401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt
cmbt5400.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5400HIGH VOLTAGE TRANSISTORPNP transistorMarkingCMBT5400 = K2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 130 VCollectoremitter voltage (open base) V
cmbt5087.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5087SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorMarkingCMBT5087= 2QPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollector-base voltage (open emitter) VCBO max. 50 VCollector-emitter voltage (open base) VCEO ma
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
