2N6105 Todos los transistores

 

2N6105 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6105

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 4.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2N6105

 

2N6105 Datasheet (PDF)

5.1. 2n6109g.pdf Size:102K _upd

2N6105
2N6105

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

5.2. 2n6107g.pdf Size:102K _upd

2N6105
2N6105

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

 5.3. 2n6109g 2n6107g.pdf Size:102K _upd

2N6105
2N6105

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

5.4. 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Size:149K _motorola

2N6105
2N6105

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in generalpurpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N61

 5.5. 2n6107 2n6111.pdf Size:48K _st

2N6105
2N6105

2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. I

5.6. 2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf Size:70K _central

2N6105

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n6107 2n6109 2n6111 2n6288 2n6292.pdf Size:90K _onsemi

2N6105
2N6105

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N611

5.8. 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf Size:101K _bocasemi

2N6105
2N6105

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

5.9. 2n6107 2n6292.pdf Size:95K _cdil

2N6105
2N6105

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100 ) V

5.10. 2n6109.pdf Size:249K _cdil

2N6105
2N6105

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.8

5.11. 2n6101.pdf Size:315K _cdil

2N6105
2N6105

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56

5.12. 2n6102 2n6103.pdf Size:99K _jmnic

2N6105
2N6105

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

5.13. 2n6098 2n6099 2n6100 2n6101.pdf Size:106K _jmnic

2N6105
2N6105

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION · ·With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098

5.14. 2n6106.pdf Size:197K _inchange_semiconductor

2N6105
2N6105

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6106 DESCRIPTION ·DC Current Gain- : h = 30-150@ I = -2A FE C ·Collector-Emitter Sustaining Voltage- : V = -70V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS

5.15. 2n6102 2n6103.pdf Size:57K _inchange_semiconductor

2N6105
2N6105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

5.16. 2n6103.pdf Size:195K _inchange_semiconductor

2N6105
2N6105

isc Silicon NPN Power Transistor 2N6103 DESCRIPTION ·DC Current Gain - : h = 15-60@ I = 8A FE C ·Collector-Emitter Sustaining Voltage- : V = 40V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.

5.17. 2n6098 2n6099 2n6100 2n6101.pdf Size:119K _inchange_semiconductor

2N6105
2N6105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETE

5.18. 2n6107 2n6109 2n6111.pdf Size:121K _inchange_semiconductor

2N6105
2N6105

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Abs

5.19. 2n6109.pdf Size:197K _inchange_semiconductor

2N6105
2N6105

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION ·DC Current Gain- : h = 30-150@ I = -2.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -50V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATIN

5.20. 2n6101.pdf Size:195K _inchange_semiconductor

2N6105
2N6105

isc Silicon NPN Power Transistor 2N6101 DESCRIPTION ·DC Current Gain - : h = 20-80@ I = 5A FE C ·Collector-Emitter Sustaining Voltage- : V = 70V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.

5.21. 2n6107.pdf Size:198K _inchange_semiconductor

2N6105
2N6105

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 DESCRIPTION ·DC Current Gain- : h = 30-150@ I = -2A FE C ·Collector-Emitter Sustaining Voltage- : V = -70V(Min) CEO(SUS) ·Complement to Type 2N6292 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applicati

5.22. 2n6106 2n6108 2n6110.pdf Size:121K _inchange_semiconductor

2N6105
2N6105

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION Ў¤ With TO-220 package Ў¤ With short pin APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25Ўж )

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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