2N6116 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6116 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO18
📄📄 Copiar
Búsqueda de reemplazo de 2N6116
- Selecciónⓘ de transistores por parámetros
2N6116 datasheet
9.2. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf 
Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All
9.3. Size:48K st
2n6107 2n6111.pdf
2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications
9.4. Size:56K st
2n6111.pdf
2N6111 SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 2 The 2N6111 is an Epitaxial-Base PNP silicon 1 transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power TO-220 switching and linear applications. INTERNAL SCHEMATIC DIA
9.6. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-
9.7. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-
9.8. Size:102K onsemi
2n6111g 2n6111g 2n6292g.pdf
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-
9.10. Size:188K cdil
2n6111.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6111 2N6111 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75
9.11. Size:197K inchange semiconductor
2n6110.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6110 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
9.12. Size:121K inchange semiconductor
2n6106 2n6108 2n6110.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=2
9.13. Size:196K inchange semiconductor
2n6111.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6111 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS
9.14. Size:121K inchange semiconductor
2n6107 2n6109 2n6111.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 B
Otros transistores... 2N6106, 2N6107, 2N6108, 2N6109, 2N611, 2N6110, 2N6111, 2N6112, BC337, 2N612, 2N6121, 2N6122, 2N6123, 2N6124, 2N6125, 2N6126, 2N6127
