2N6130 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6130
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2N6130
2N6130 Datasheet (PDF)
2n6129 2n6130 2n6131.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r
2n6130.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
2n6129 2n6130 2n6131.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute
2n6132 2n6133 2n6134.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra
2n6131.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6131DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
2n6132.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6132DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Complement to Type 2N6129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
2n6132 2n6133 2n6134.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o
2n6133.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6133DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
2n6134.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6134DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
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