2N6130 Specs and Replacement
Type Designator: 2N6130
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2N6130 datasheet
..1. Size:104K jmnic
2n6129 2n6130 2n6131.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r... See More ⇒
..2. Size:194K inchange semiconductor
2n6130.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6130 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
..3. Size:120K inchange semiconductor
2n6129 2n6130 2n6131.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ... See More ⇒
9.1. Size:104K jmnic
2n6132 2n6133 2n6134.pdf 

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ra... See More ⇒
9.3. Size:194K inchange semiconductor
2n6131.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6131 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
9.4. Size:195K inchange semiconductor
2n6132.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6132 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Complement to Type 2N6129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
9.5. Size:119K inchange semiconductor
2n6132 2n6133 2n6134.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o... See More ⇒
9.6. Size:195K inchange semiconductor
2n6133.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6133 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
9.7. Size:196K inchange semiconductor
2n6134.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6134 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
Detailed specifications: 2N6123
, 2N6124
, 2N6125
, 2N6126
, 2N6127
, 2N6128
, 2N6129
, 2N613
, 2N3906
, 2N6131
, 2N6132
, 2N6133
, 2N6134
, 2N6135
, 2N6136
, 2N614
, 2N615
.
History: CI3706
| 2N614
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