CSB1412 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSB1412
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 5 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 82
Paquete / Cubierta: TO-252 DPAK
Búsqueda de reemplazo de CSB1412
CSB1412 Datasheet (PDF)
csb1436.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLASTIC POWER TRANSISTOR CSB1436(9AW)TO126MARKING : CDILB1436RLow Freq.Power AMP.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 30 VCollector -Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 6 VCollector Current (DC) I
csb1426.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB1426TO-92Plastic PackageBCELow Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 20 VEmitter Base Voltage VE
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N779 | 2SD973A | BCW14K | 40006 | BDS10N1A | 2SD234R | DRAF123J
History: 2N779 | 2SD973A | BCW14K | 40006 | BDS10N1A | 2SD234R | DRAF123J



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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