2N6196 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6196
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 50 V
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: U126
Búsqueda de reemplazo de 2N6196
2N6196 Datasheet (PDF)
2n6190 2n6191 2n6192 2n6193.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n6193lcc4.pdf

2N6193LCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0
2n6193alcc4.pdf

2N6193ALCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (
2n6199.pdf

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications Cup to 250 MHz. BE EFEATURES:C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions DHJ Omnigold Metallization System G#8-32 UNC-2AF E MA
Otros transistores... 2N619 , 2N6190 , 2N6191 , 2N6192 , 2N6193 , 2N6193A , 2N6194 , 2N6195 , 2N4401 , 2N6197 , 2N6198 , 2N6199 , 2N61A , 2N61B , 2N61C , 2N62 , 2N620 .
History: NSBC144TF3
History: NSBC144TF3



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