2N6196 Datasheet and Replacement
Type Designator: 2N6196
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: U126
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2N6196 Datasheet (PDF)
2n6190 2n6191 2n6192 2n6193.pdf

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2n6193lcc4.pdf

2N6193LCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0
2n6193alcc4.pdf

2N6193ALCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (
2n6199.pdf

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications Cup to 250 MHz. BE EFEATURES:C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions DHJ Omnigold Metallization System G#8-32 UNC-2AF E MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MPS8001 | KTC2553 | 2SC559 | 2SB77AH | KT3139A | MN13A | AC187-01
Keywords - 2N6196 transistor datasheet
2N6196 cross reference
2N6196 equivalent finder
2N6196 lookup
2N6196 substitution
2N6196 replacement
History: MPS8001 | KTC2553 | 2SC559 | 2SB77AH | KT3139A | MN13A | AC187-01



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