CSB1086Q Todos los transistores

 

CSB1086Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSB1086Q
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-emisor (Vce): 120 V
   Corriente del colector DC máxima (Ic): 1.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO-126

 Búsqueda de reemplazo de transistor bipolar CSB1086Q

 

CSB1086Q Datasheet (PDF)

 9.1. Size:229K  cdil
 csb1065.pdf pdf_icon

CSB1086Q

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB1065 TO126 Plastic Package E C B Complementary CSD1506 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b

 9.2. Size:235K  cdil
 csb1058.pdf pdf_icon

CSB1086Q

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1058 TO-92 BCE B C E Low Frequency Power Amplifier. Complementary CSD1489 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter Voltage BVCEO 16 V Emitter B

Otros transistores... CSB1086 , CSB1086A , CSB1086AN , CSB1086AP , CSB1086AQ , CSB1086B , CSB1086N , CSB1086P , 13007 , CSB1086R , CSB507 , CSB507C , CSB507D , CSB507E , CSB507F , CSB624 , CSB817F .

History: 2SD1683T | NJD35N04G | 2SC5791 | 2SD1940E | 2SD1936U | BCP56-16H | CD9011D

 

 
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