CSC1009G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSC1009G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar CSC1009G
CSC1009G Datasheet (PDF)
csa709 csc1009.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNPCSC1009 NPNTO-92CBEHigh Voltage Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )DESCRIPTION SYMBOL CSA709 CSC1009 UNITCollector -Base Voltage VCBO 160 160 VCollector -Emitter Voltage VCEO 150 140 VEmitter -Base Voltage VEBO 8.0 8.0
csc1008 csa708.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPNCSA708 PNPTO-92CBELow Frequency Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 60 VEmitter -Base Voltage VEBO
csc1061.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSC1061CSC1061 NPN PLASTIC POWER TRANSISTORLow frequency Power AmplifierPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75 3.88G 2.29 2.79H
csc1047 bcd.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1047TO-92Plastic PackageBCESuitable for RF Amplifier in FM/AM RadiosABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VCollector Emitter Voltage VCEO 20 VVEBOEmitter Base Voltage 3 VC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CSC2309F | BF570 | BTD1616AA3 | K2127B
History: CSC2309F | BF570 | BTD1616AA3 | K2127B
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050