2N6215 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6215
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 50 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO61
Búsqueda de reemplazo de transistor bipolar 2N6215
2N6215 Datasheet (PDF)
2n6216 2n6217.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2n6211.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6211DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -225V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchi
2n6216 2n6217.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
2n6217.pdf
isc Silicon NPN Power Transistor 2N6217DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6216.pdf
isc Silicon NPN Power Transistor 2N6216DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6212.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6212DESCRIPTIONWith TO-3 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitionAlternator regulatorMotor controlsABSOLUTE MA
2n6213.pdf
isc Silicon PNP Power Transistor 2N6213DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchingregulators, converte
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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