2N6215 Datasheet and Replacement
Type Designator: 2N6215
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO61
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2N6215 Datasheet (PDF)
2n6216 2n6217.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2n6211.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6211DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -225V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchi
2n6216 2n6217.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
Datasheet: 2N6206 , 2N6207 , 2N6208 , 2N621 , 2N6211 , 2N6212 , 2N6213 , 2N6214 , 2SA1015 , 2N6216 , 2N6217 , 2N6218 , 2N6219 , 2N622 , 2N6220 , 2N6221 , 2N6222 .
History: 2C2907A | 2SA1469R | BLX71 | KRC159F | KRC885T | PMD13K100 | BLX33
Keywords - 2N6215 transistor datasheet
2N6215 cross reference
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History: 2C2907A | 2SA1469R | BLX71 | KRC159F | KRC885T | PMD13K100 | BLX33



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