TT2148
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TT2148
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Capacitancia de salida (Cc): 120
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO-3PB
Búsqueda de reemplazo de transistor bipolar TT2148
TT2148
Datasheet (PDF)
..1. Size:34K sanyo
tt2148.pdf
Ordering number : ENN0000TT2148NPN Triple Diffused Planar Silicon TransistorTT2148Switching Regulator ApplicationsPreliminaryFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2022A Wide ASO.[TT2148] Adoption of MBIT process.15.63.24.814.02.01.62.00.61.01 2 31 : Base0.62 : Collec
9.1. Size:30K sanyo
tt2142.pdf
Ordering number : ENN7550TT2142NPN Triple Diffused Planar Silicon TransistorTT2142Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[TT2142] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0 2.1
9.2. Size:39K sanyo
tt2140ls.pdf
Ordering number : ENN7215ATT2140LSNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal DeflectionTT2140LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co
9.3. Size:1594K sanyo
tt2188 tt2146 tt2178 tt2158.pdf
2003Sanyo Sales ToolSanyo Semiconductor.SPS/ADAPTOR/CHARGERDSC/PDA/B/L and LCD MonitorNB/MBWLANSPS/ADAPTOR/CHARGER10KK/5KK/5KK/MBLOCK BIP H/DLA5648 TT2188/46/94/48/58MAIN SW(SPS)TM3060B/64B/68GLA5645 A2099/C5888L5038 K2624/5/8LSMAIN LA5614M K2678LS/3491SW(ADP/CHA)
9.4. Size:226K inchange semiconductor
tt2140.pdf
isc Silicon NPN Power Transistor TT2140DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 3.15ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE
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