CSD1616 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CSD1616TO-92BCEC BEAudio Frequency Power Amplifier And Medium Speed SwitchingComplementary CSB1116/1116AABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Bas

CSD16325Q5www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16325Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3.5 nC Avalanche RatedVGS = 3V 2.1

CSD16327Q3www.ti.com SLPS371 DECEMBER 2011N-Channel NexFET Power MOSFETCheck for Samples: CSD16327Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5 m Avalanche RatedRDS(on) Drain to

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16340Q3SLPS247E DECEMBER 2009 REVISED AUGUST 2014CSD16340Q3 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C VALUE UNIT Resistance Rated at VGS =2.5 VVDS Drain-to-Source Voltage 25 V Ultra-Low Qg and QgdQg Gate Ch

CSD16321Q5www.ti.com SLPS220B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16321Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 14 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.5 nC Avalanche RatedVGS = 3V 2.8 m

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16401Q5SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015CSD16401Q5 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultralow Qg and QgdTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source voltage 25 V Avalanche RatedQg Gate Charge,

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16556Q5BSLPS432C NOVEMBER 2012 REVISED JANUARY 2015CSD16556Q5B 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Ultralow Qg and QgdVDS Drain-to-Source Voltage 25 V Low Thermal ResistanceQg Gate Cha

CSD16409Q3www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16409Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 4 nC Avalanche RatedQgd Gate Charge Gate to Drain 1 nC Pb Free Terminal PlatingVGS = 4.5V 9.5 m

CSD16404Q5Awww.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16404Q5A1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal PlatingVGS = 4.5V 5.

CSD16322Q5www.ti.com SLPS219B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16322Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 6.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.3 nC Avalanche RatedVGS = 3V 5.4 m

CSD16323Q3www.ti.com SLPS224B AUGUST 2009REVISED NOVEMBER 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16323Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5.4 m Avalanch

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16411Q3SLPS206B AUGUST 2009 REVISED NOVEMBER 2016CSD16411Q3 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 25 V Avalanche RatedQg Gate Charge Total (4

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16415Q5SLPS259A DECEMBER 2011 REVISED SEPTEMBER 2015CSD16415Q5 25-V N-Channel NexFET Power MOSFETAdded text for spacing1 Features1 Ultralow Qg and QgdProduct Summary Very Low On-ResistanceTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Sou

CSD16408Q5www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to-source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 6.7 nC Avalanche RatedQgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic PackageVGS = 4.5 V 5.4 mrDS(on) D

CSD16407Q5www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16407Q51FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to0source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 13.3 nC Avalanche RatedQgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package

CSD16406Q3www.ti.com SLPS202A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16406Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 5.8 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.5 nC Pb Free Terminal PlatingVGS = 4.5V

CSD16342Q5Awww.ti.com SLPS369A FEBRUARY 2012 REVISED MARCH 2012N-Channel NexFET Power MOSFETsCheck for Samples: CSD16342Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Resistance Rated at VGS = 2.5VQg Gate Charge Total (4.5V) 6.8 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 1.2 nCVGS = 2.5V 6.1 m

CSD16403Q5Awww.ti.com SLPS201A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16403Q5A1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 13.3 nC Avalanche RatedQgd Gate Charge Gate to Drain 3.5 nC Pb Free Terminal PlatingVGS = 4.

CSD16301Q2www.ti.com SLPS235C OCTOBER 2009REVISED JULY 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16301Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2 nC Pb Free Terminal PlatingQgd Gate Charge Gate to Drain 0.4 nC RoHS CompliantVGS = 3V 27 m

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16570Q5BSLPS496 JULY 2014CSD16570Q5B 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 95 nC Avalan

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638(9AW)TO126 MARKING : CDIL D1638Low Freq. Power Amp.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO 6.0 VCollector

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 4.0 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 1.0 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 9.5 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Comp

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 6.5 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 1.7 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 5.7 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl

N-Channel CICLON NexFET Power MOSFETs CSD16413Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 9.0 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 2.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 4.1 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 3.1 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complian

N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 3.9 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 1.1 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 9.6 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 6.8 m Pb Free Terminal Plating S Vth 1.9 V RoHS Complian

N-Channel CICLON NexFET Power MOSFETs CSD16412Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 2.9 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 0.7 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 13 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 9 m Pb Free Terminal Plating S Vth 2.0 V RoHS Compliant

N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 2.9 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 0.7 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 12 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compli

N-Channel CICLON NexFET Power MOSFETs CSD16414Q5 Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 16.6 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 4.4 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.1 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 1.5 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compliant

N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 13.3 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 3.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.5 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli

N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 13.3 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 3.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.9 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 2.2 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complia

CSD16323Q3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control I

CSD16406Q3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control I