CSD1616 - описание и поиск аналогов

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSD1616 TO-92 BCE C B E Audio Frequency Power Amplifier And Medium Speed Switching Complementary CSB1116/1116A ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter Bas

CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1

CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16340Q3 SLPS247E DECEMBER 2009 REVISED AUGUST 2014 CSD16340Q3 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C VALUE UNIT Resistance Rated at VGS =2.5 V VDS Drain-to-Source Voltage 25 V Ultra-Low Qg and Qgd Qg Gate Ch

Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD16401Q5 SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015 CSD16401Q5 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultralow Qg and Qgd TA = 25 C VALUE UNIT Low Thermal Resistance VDS Drain-to-Source voltage 25 V Avalanche Rated Qg Gate Charge,

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16556Q5B SLPS432C NOVEMBER 2012 REVISED JANUARY 2015 CSD16556Q5B 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultralow Qg and Qgd VDS Drain-to-Source Voltage 25 V Low Thermal Resistance Qg Gate Cha

CSD16409Q3 www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16409Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 4 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1 nC Pb Free Terminal Plating VGS = 4.5V 9.5 m

CSD16404Q5A www.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFET Check for Samples CSD16404Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal Plating VGS = 4.5V 5.

CSD16323Q3 www.ti.com SLPS224B AUGUST 2009 REVISED NOVEMBER 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16323Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5.4 m Avalanch

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16411Q3 SLPS206B AUGUST 2009 REVISED NOVEMBER 2016 CSD16411Q3 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low-Thermal Resistance VDS Drain-to-Source Voltage 25 V Avalanche Rated Qg Gate Charge Total (4

Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD16415Q5 SLPS259A DECEMBER 2011 REVISED SEPTEMBER 2015 CSD16415Q5 25-V N-Channel NexFET Power MOSFET Added text for spacing 1 Features 1 Ultralow Qg and Qgd Product Summary Very Low On-Resistance TA = 25 C VALUE UNIT Low Thermal Resistance VDS Drain-to-Sou

CSD16408Q5 www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 6.7 nC Avalanche Rated Qgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic Package VGS = 4.5 V 5.4 m rDS(on) D

CSD16407Q5 www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16407Q5 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to0source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 13.3 nC Avalanche Rated Qgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package

CSD16406Q3 www.ti.com SLPS202A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16406Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 5.8 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.5 nC Pb Free Terminal Plating VGS = 4.5V

CSD16342Q5A www.ti.com SLPS369A FEBRUARY 2012 REVISED MARCH 2012 N-Channel NexFET Power MOSFETs Check for Samples CSD16342Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Resistance Rated at VGS = 2.5V Qg Gate Charge Total (4.5V) 6.8 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 1.2 nC VGS = 2.5V 6.1 m

CSD16403Q5A www.ti.com SLPS201A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16403Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.3 nC Avalanche Rated Qgd Gate Charge Gate to Drain 3.5 nC Pb Free Terminal Plating VGS = 4.

CSD16301Q2 www.ti.com SLPS235C OCTOBER 2009 REVISED JULY 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16301Q2 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total ( 4.5V) 2 nC Pb Free Terminal Plating Qgd Gate Charge Gate to Drain 0.4 nC RoHS Compliant VGS = 3V 27 m

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16570Q5B SLPS496 JULY 2014 CSD16570Q5B 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 95 nC Avalan

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638 (9AW) TO126 MARKING CDIL D1638 Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 6.0 V Collector

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 4.0 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 1.0 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 9.5 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Comp

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 6.5 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 1.7 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 5.7 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl

N-Channel CICLON NexFET Power MOSFETs CSD16413Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 9.0 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 2.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 4.1 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 3.1 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complian

N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 3.9 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 1.1 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 9.6 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 6.8 m Pb Free Terminal Plating S Vth 1.9 V RoHS Complian

N-Channel CICLON NexFET Power MOSFETs CSD16412Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 2.9 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 0.7 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 13 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 9 m Pb Free Terminal Plating S Vth 2.0 V RoHS Compliant

N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 2.9 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 0.7 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 12 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compli

N-Channel CICLON NexFET Power MOSFETs CSD16414Q5 Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 16.6 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 4.4 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.1 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 1.5 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compliant

N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.5 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli

N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.9 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 2.2 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complia

CSD16323Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I

CSD16406Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I