TIP33AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP33AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de transistor bipolar TIP33AF
TIP33AF Datasheet (PDF)
tip33a tip33c.pdf
TIP33A, TIP33CNPN High-Power TransistorsDesigned for general-purpose power amplifier and switchingapplications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in10 AMPERE Pb-Free Packages are Available*NPN SILICONPOWER TRANSISTORS60 & 100 VOLT, 80 WATTSMAXIMUM RATINGSRating Symbol
tip33 tip33a tip33b tip33c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
tip33a.pdf
isc Silicon NPN Power Transistor TIP33ADESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP34AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUT11AI
History: BUT11AI
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