TIP33AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP33AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO-3P
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TIP33AF datasheet
tip33a tip33c.pdf
TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in 10 AMPERE Pb-Free Packages are Available* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol
tip33 tip33a tip33b tip33c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
tip33a.pdf
isc Silicon NPN Power Transistor TIP33A DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP34A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM
Otros transistores... MZT127, MZT2955, TIP122F, TIP127F, TIP2955F, TIP2955HVF, TIP3055F, TIP3055HVF, 2222A, TIP33BF, TIP33CF, TIP34AF, TIP34BF, TIP34CF, TIP35AF, TIP35BF, TIP35CF
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