TIP33AF Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP33AF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-3P
TIP33AF Transistor Equivalent Substitute - Cross-Reference Search
TIP33AF Datasheet (PDF)
tip33a tip33c.pdf
TIP33A, TIP33CNPN High-Power TransistorsDesigned for general-purpose power amplifier and switchingapplications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in10 AMPERE Pb-Free Packages are Available*NPN SILICONPOWER TRANSISTORS60 & 100 VOLT, 80 WATTSMAXIMUM RATINGSRating Symbol
tip33 tip33a tip33b tip33c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
tip33a.pdf
isc Silicon NPN Power Transistor TIP33ADESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP34AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
