TIP33BF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP33BF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO-3P

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TIP33BF datasheet

 8.1. Size:105K  motorola
 tip33bre.pdf pdf_icon

TIP33BF

Order this document MOTOROLA by TIP33B/D SEMICONDUCTOR TECHNICAL DATA NPN * TIP33B Complementary Silicon TIP33C PNP High-Power Transistors TIP34B* . . . for general purpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A

 8.2. Size:120K  inchange semiconductor
 tip33 tip33a tip33b tip33c.pdf pdf_icon

TIP33BF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 8.3. Size:219K  inchange semiconductor
 tip33b.pdf pdf_icon

TIP33BF

isc Silicon NPN Power Transistor TIP33B DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

MOSTRAR MÁS

Otros transistores... MZT2955, TIP122F, TIP127F, TIP2955F, TIP2955HVF, TIP3055F, TIP3055HVF, TIP33AF, 2SC5198, TIP33CF, TIP34AF, TIP34BF, TIP34CF, TIP35AF, TIP35BF, TIP35CF, TIP36AF