All Transistors. TIP33BF Datasheet

 

TIP33BF Datasheet and Replacement


   Type Designator: TIP33BF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-3P
 

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TIP33BF Datasheet (PDF)

 8.1. Size:105K  motorola
 tip33bre.pdf pdf_icon

TIP33BF

Order this documentMOTOROLAby TIP33B/DSEMICONDUCTOR TECHNICAL DATANPN*TIP33BComplementary SiliconTIP33CPNPHigh-Power TransistorsTIP34B*. . . for generalpurpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A

 8.2. Size:120K  inchange semiconductor
 tip33 tip33a tip33b tip33c.pdf pdf_icon

TIP33BF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 8.3. Size:219K  inchange semiconductor
 tip33b.pdf pdf_icon

TIP33BF

isc Silicon NPN Power Transistor TIP33BDESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP34BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM

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History: H732TM | 2SC5446 | MMBT3906HE3 | 3CD42 | ED8550C | 2N1693 | MPSA13RLRPG

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