TIP33BF Specs and Replacement
Type Designator: TIP33BF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-3P
TIP33BF Substitution
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TIP33BF datasheet
Order this document MOTOROLA by TIP33B/D SEMICONDUCTOR TECHNICAL DATA NPN * TIP33B Complementary Silicon TIP33C PNP High-Power Transistors TIP34B* . . . for general purpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A ... See More ⇒
tip33 tip33a tip33b tip33c.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base ... See More ⇒
isc Silicon NPN Power Transistor TIP33B DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM... See More ⇒
Detailed specifications: MZT2955, TIP122F, TIP127F, TIP2955F, TIP2955HVF, TIP3055F, TIP3055HVF, TIP33AF, 2SC5198, TIP33CF, TIP34AF, TIP34BF, TIP34CF, TIP35AF, TIP35BF, TIP35CF, TIP36AF
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