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TIP34AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP34AF
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO-3P

 Búsqueda de reemplazo de transistor bipolar TIP34AF

 

TIP34AF Datasheet (PDF)

 8.1. Size:120K  inchange semiconductor
tip34 tip34a tip34b tip34c.pdf

TIP34AF TIP34AF

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP34/34A/34B/34C DESCRIPTION With TO-3PN package Complement to type TIP33/33A/33B/33C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 9.1. Size:108K  st
tip33c tip34c.pdf

TIP34AF TIP34AF

TIP33CTIP34CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagramsTable 1.

 9.2. Size:48K  st
tip33c tip34c .pdf

TIP34AF TIP34AF

TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3The TIP33C is a silicon Epitaxial-Base NPN2power transistor mounted in TO-218 plastic1package. It is intented for use in linear andswitching applications.TO-218The complementary PNP t

 9.3. Size:85K  bourns
tip34-a-b-c.pdf

TIP34AF TIP34AF

TIP34, TIP34A, TIP34B, TIP34CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGETIP33 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi

 9.4. Size:144K  mospec
tip33 tip34.pdf

TIP34AF TIP34AF

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 9.5. Size:332K  cdil
tip33p tip34.pdf

TIP34AF TIP34AF

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyHIGH POWER TRANSISTORS TIP33, A, B, C NPNTIP34, A, B, C PNPTO- 3PN Non IsolatedPlastic PackageFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33CDESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34CCollector Emitter Voltage V

 9.6. Size:281K  cdil
tip33 tip34f.pdf

TIP34AF TIP34AF

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CFTIP 34F,34AF, 34BF, 34CFTO -3PPlastic PackageBCEComplementary TIP34F, 34AF, 34BF, 34CFGeneral Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 33F 33AF 33

 9.7. Size:312K  kec
tip34c.pdf

TIP34AF TIP34AF

SEMICONDUCTOR TIP34CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to TIP33C.Recommended for 45W 50W Audio Frequency DIM MILLIMETERSA 15.9 MAXAmplifier Output Stage.B 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdMAXIMUM RATING (Ta=25 )H 9.0I 4.5CHARACTERISTIC SY

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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