Справочник транзисторов. TIP34AF

 

Биполярный транзистор TIP34AF - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: TIP34AF
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO-3P

 Аналоги (замена) для TIP34AF

 

 

TIP34AF Datasheet (PDF)

 8.1. Size:120K  inchange semiconductor
tip34 tip34a tip34b tip34c.pdf

TIP34AF
TIP34AF

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP34/34A/34B/34C DESCRIPTION With TO-3PN package Complement to type TIP33/33A/33B/33C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 9.1. Size:108K  st
tip33c tip34c.pdf

TIP34AF
TIP34AF

TIP33CTIP34CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagramsTable 1.

 9.2. Size:48K  st
tip33c tip34c .pdf

TIP34AF
TIP34AF

TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3The TIP33C is a silicon Epitaxial-Base NPN2power transistor mounted in TO-218 plastic1package. It is intented for use in linear andswitching applications.TO-218The complementary PNP t

 9.3. Size:85K  bourns
tip34-a-b-c.pdf

TIP34AF
TIP34AF

TIP34, TIP34A, TIP34B, TIP34CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGETIP33 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi

 9.4. Size:144K  mospec
tip33 tip34.pdf

TIP34AF
TIP34AF

AAA

 9.5. Size:332K  cdil
tip33p tip34.pdf

TIP34AF
TIP34AF

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyHIGH POWER TRANSISTORS TIP33, A, B, C NPNTIP34, A, B, C PNPTO- 3PN Non IsolatedPlastic PackageFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33CDESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34CCollector Emitter Voltage V

 9.6. Size:281K  cdil
tip33 tip34f.pdf

TIP34AF
TIP34AF

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CFTIP 34F,34AF, 34BF, 34CFTO -3PPlastic PackageBCEComplementary TIP34F, 34AF, 34BF, 34CFGeneral Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 33F 33AF 33

 9.7. Size:312K  kec
tip34c.pdf

TIP34AF
TIP34AF

SEMICONDUCTOR TIP34CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to TIP33C.Recommended for 45W 50W Audio Frequency DIM MILLIMETERSA 15.9 MAXAmplifier Output Stage.B 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdMAXIMUM RATING (Ta=25 )H 9.0I 4.5CHARACTERISTIC SY

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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