2SC5446 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5446
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 1700 V
Tensión colector-emisor (Vce): 600 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 18 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.7 MHz
Capacitancia de salida (Cc): 290 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 2-21F2A
Búsqueda de reemplazo de 2SC5446
2SC5446 datasheet
2sc5446.pdf
2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5445.pdf
2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5443.pdf
Ordering number EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
2sc5444.pdf
Ordering number EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5444] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
Otros transistores... TIP35AF , TIP35BF , TIP35CF , TIP36AF , TIP36BF , TIP36CF , 2SC5011 , 2SC5419 , TIP142 , 2SC5763 , 2SC5803 , 2SD2624 , D209L , FJAF6916 , BU3150 , 2SC5793 , 2SB1685 .
History: CSB621S
History: CSB621S
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627 | 2sc680 | 2sd234








