2SC5446
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5446
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 1700
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 18
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.7
MHz
Capacitancia de salida (Cc): 290
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 2-21F2A
Búsqueda de reemplazo de transistor bipolar 2SC5446
2SC5446
Datasheet (PDF)
..1. Size:340K toshiba
2sc5446.pdf
2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT
8.1. Size:343K toshiba
2sc5445.pdf
2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT
8.2. Size:42K sanyo
2sc5443.pdf
Ordering number:EN6101NPN Triple Diffused Planar Silicon Transistor2SC5443Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5443] Adoption of MBIT process.20.03.35.02.03.40.6
8.3. Size:42K sanyo
2sc5444.pdf
Ordering number:EN6102NPN Triple Diffused Planar Silicon Transistor2SC5444Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5444] Adoption of MBIT process.20.03.35.02.03.40.6
8.4. Size:60K panasonic
2sc5440.pdf
Power Transistors2SC54402SC54402SC54402SC54402SC5440Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3 3.20.1For horizontal deflection output55 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5(4.0) High-speed switching52.00.2 Wide area of safe operation (ASO)1.
8.5. Size:45K hitachi
2sc5449.pdf
2SC5449Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-578 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5449Absolute Maximum Ratings (Ta = 25C)
8.6. Size:45K hitachi
2sc5448.pdf
2SC5448Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-577 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5448Absolute Maximum Ratings (Ta = 25C)
8.7. Size:46K hitachi
2sc5447.pdf
2SC5447Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-576 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCES = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFMC21B1. Base32. CollectorE13. Emitter232SC5447Absolute Maximum Rat
8.8. Size:188K inchange semiconductor
2sc5449.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5449DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
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