2SC5924 Todos los transistores

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Power Transistors 2SC5926 Silicon NPN triple diffusion planar type Unit mm For power amplification 10.0 0.2 5.0 0.1 1.0 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) 1.2 0.1 Allowing supply with the radial taping C 1.0 1.48 0.2 2.25 0.2 0.65 0.1 Absolute Maximum

2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage VCE (sat) = 0.2 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristi

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.3 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collecto

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector powe

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Coll

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) High-speed switching tf = 25 ns (typ.) 3 2 A

Ordering number ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors 2SC5999 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute

Ordering number ENN8091 2SC5980 NPN Epitaxial Planar Silicon Transistor 2SC5980 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High

Ordering number ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor 2SC5994 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rat

Ordering number ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High-speed. unit mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process). [2SC5966] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

Ordering number ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6 2.0 x 2.0 x 0.8

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features High Transition Frequency fT = 11 GHz typ. High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Vol

FJAF6810A High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage BVCBO = 1550V High Switching Speed tF(typ.) =0.1 s For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Rating Units VCBO Collector-Base Vo

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = 2A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base 4) Complements the 2SA2113 (2) Emitter Each

2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity ELECTRICAL CONNECTION High Speed Switching 2 Typical Applications 1 Base Voltage Regulators 1 2 Collector 3 Emitter Relay Drivers Lamp Drivers 3 Electri

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 For power amplification 9.9 0.3 2.9 0.2 For TV VM circuit 3.2 0.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) 1.4 0.2 Full-pack package which can be installed to the heat sink with one 2.6 0.1 1.6 0.2 screw. 0.8 0.1 0.5

Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf

Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High transition frequency fT Small collector output capacitance (Common base, input open cir- cuited) Cob and reverse transfer capacitance (Common base) Crb 0.23+0.05 1 2 0.02 SSS-Mini type package, allo

Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V Wide safe operation area Built-in dumper diode 5 5 (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol

Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification Unit mm 4.6 0.2 For TV vertical deflection output 9.9 0.3 2.9 0.2 Features 3.2 0.1 Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package 5 kV Full-pack package which can be installed to the heat sink with one screw.

Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High speed switching tf

Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V High-speed switching tf

Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High-speed switching tf

Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V Wide safe operation area Built-in dumper diode 5 5 (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol Rating Unit

Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V Wide safe operation area Built-in dumper diode 5 5 (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol Rating Unit

Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power amplification with high forward current transfer ratio 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink

2SC5946 NPN Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 fT SSS 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.

SMALL-SIGNAL TRANSISTOR 2SC5996 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed 2.1 silicon NPN epitaxial transistor for muting and switching. 0.425 0.425 application FEATURE High Emitter to Base voltage VEBO=50V High Reverse hFE Low ON RESIST

SMALL-SIGNAL TRANSISTOR 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=50V High Reverse hFE Low ON RESISTANCE. RON=1 1.27 1.

SMALL-SIGNAL TRANSISTOR 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=40V High Reverse hFE Low ON RESISTANCE. R ON=1 1.2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SA2140 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplification For TV VM circuit ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5949 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA2121 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5902 DESCRIPTION High Breakdown Voltage Built-in damper diode type High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applicati