STD03P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Darlington Transistor with built-in compensation diodes STD03P March, 2006 Package ---MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03N Applications Audio output Equivalent circuit E(1)

Darlington Transistor with built-in compensation diodes STD03N March, 2006 Package--- MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03P Applications Audio output Equivalent circuit C(3)

STU03N20GreenProductSTD03N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.3.28 @ VGS=10VTO-252 and TO-251 Package.200V 2A3.59 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

STU03L01GreenProductSTD03L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.0.9 @ VGS=10VTO-252 and TO-251 Package.100V 2A1.1 @ VGS=4.5V ESD Protected.GSSTU SERIESSTD SERIES( )TO - 252AA

STU03L07GreenProductSTD03L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.228 @ VGS=10VTO-252 and TO-251 Package.70V 9A 267 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO