Справочник транзисторов. STD03P

 

Биполярный транзистор STD03P - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: STD03P
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 160 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5000
   Корпус транзистора: TO-3P-5PIN

 Аналоги (замена) для STD03P

 

 

STD03P Datasheet (PDF)

 ..1. Size:387K  sanken-ele
std03p.pdf

STD03P
STD03P

Darlington Transistor with built-in compensation diodes STD03P March, 2006 Package ---MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03N Applications Audio output Equivalent circuit E(1)

 9.1. Size:392K  sanken-ele
std03n.pdf

STD03P
STD03P

Darlington Transistor with built-in compensation diodes STD03N March, 2006 Package--- MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03P Applications Audio output Equivalent circuit C(3)

 9.2. Size:120K  samhop
stu03n20 std03n20.pdf

STD03P
STD03P

STU03N20GreenProductSTD03N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.3.28 @ VGS=10VTO-252 and TO-251 Package.200V 2A3.59 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

 9.3. Size:144K  samhop
stu03l01 std03l01.pdf

STD03P
STD03P

STU03L01GreenProductSTD03L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.0.9 @ VGS=10VTO-252 and TO-251 Package.100V 2A1.1 @ VGS=4.5V ESD Protected.GSSTU SERIESSTD SERIES( )TO - 252AA

 9.4. Size:149K  samhop
stu03l07 std03l07.pdf

STD03P
STD03P

STU03L07GreenProductSTD03L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.228 @ VGS=10VTO-252 and TO-251 Package.70V 9A 267 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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