2SC2501 Todos los transistores

isc Silicon NPN Power Transistors 2SC2501 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RAT

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2SC2500 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 8.200 Strobe flash applications 0.600 0.800 Medium power amplifier applications 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP 2.440 2.640 Symbol Parameter Value Units 0.000

2SC2500 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800 Features 6.200 Strobe flash applications 8.400 8.800 Medium power amplifier applications 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600 Symbol Parameter Va

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic

isc Silicon NPN Power Transistor 2SC2502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switching in in