2SC4536 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs p

SMD Type Transistors NPN Transistors 2SC4536 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.25A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage V

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION Low Noise NF = 1.5 dB TYP. @V = 10 V, I = 10 mA, f = 1 GHz CE C Low Distortion IM = 57.5 dB TYP. @V = 10 V, I = 50 mA 2 CE C IM = 82 dB TYP. @V = 10 V, I = 50 mA 3 CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 700 mA) High speed switching time t = 0.3 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Ma

Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th

FUJI POWER TRANSISTOR 2SC4538R TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators JEDEC (TO-3PF) High frewuency inverters EIAJ - General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings (Tc=2

2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4537 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction

JMnic Product Specification Silicon NPN Power Transistors 2SC4533 DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4531 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratin

JMnic Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute m

SMD Type Transistors NPN Transistors 2SC4539 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION Low Noise NF = 1.6 dB TYP., @V = 5 V, I = 5 mA, f = 900 MHz CE C High Power Gain PG = 10 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSO

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4533 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4531 DESCRIPTION High Breakdown Voltage High Switching Speed Low saturation voltage Built in damper diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4538R DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters