2SC4536 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETNPN SILICON RF TRANSISTOR2SC4536NPN EPITAXIAL SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW-NOISE AMPLIFICATION3-PIN POWER MINIMOLDDESCRIPTIONThe 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It featuresexcellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, itemploys p

SMD Type TransistorsNPN Transistors2SC4536SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.25A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage V

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4536DESCRIPTIONLow NoiseNF = 1.5 dB TYP. @V = 10 V, I = 10 mA, f = 1 GHzCE CLow DistortionIM = 57.5 dB TYP. @V = 10 V, I = 50 mA2 CE CIM = 82 dB TYP. @V = 10 V, I = 50 mA3 CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for

2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) High speed switching time: t = 0.3 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Ma

Power Transistors2SC4533Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

FUJI POWER TRANSISTOR2SC4538RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

2SC4537Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4537Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 100 mWJunction

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4533 DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4531 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratin

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute m

SMD Type TransistorsNPN Transistors2SC45391.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17431.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4537DESCRIPTIONLow NoiseNF = 1.6 dB TYP., @V = 5 V, I = 5 mA, f = 900 MHzCE CHigh Power GainPG = 10 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF, UHF low noise amplifier.ABSO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4533DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4531DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow saturation voltageBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4538RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters