2SC4536 Datasheet. Specs and Replacement

Type Designator: 2SC4536  📄📄 

SMD Transistor Code: QQ_QR_QS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1000 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT-89

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2SC4536 datasheet

 ..1. Size:47K  nec

2sc4536.pdf pdf_icon

2SC4536

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs p... See More ⇒

 ..2. Size:1000K  kexin

2sc4536.pdf pdf_icon

2SC4536

SMD Type Transistors NPN Transistors 2SC4536 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.25A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage V... See More ⇒

 ..3. Size:190K  inchange semiconductor

2sc4536.pdf pdf_icon

2SC4536

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION Low Noise NF = 1.5 dB TYP. @V = 10 V, I = 10 mA, f = 1 GHz CE C Low Distortion IM = 57.5 dB TYP. @V = 10 V, I = 50 mA 2 CE C IM = 82 dB TYP. @V = 10 V, I = 50 mA 3 CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for... See More ⇒

 8.1. Size:157K  toshiba

2sc4539.pdf pdf_icon

2SC4536

2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 700 mA) High speed switching time t = 0.3 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Ma... See More ⇒

Detailed specifications: 2SC4184, 2SC4225, 2SC4227, 2SC4228, 2SC4411, 2SC4457, 2SC4459, 2SC4461, TIP42C, 2SC4547, 2SC4563, 2SC4568, 2SC4569, 2SC4570, 2SC4571, 2SC4591, 2SC4592

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