2SC4647
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4647
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO-92
Búsqueda de reemplazo de transistor bipolar 2SC4647
2SC4647
Datasheet (PDF)
..1. Size:28K hitachi
2sc4647.pdf
2SC4647Silicon NPN Triple DiffusedApplicationHigh voltage amplifierFeatures High break down voltageV(BR)CEO = 300 V min.OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC4647Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector
8.2. Size:123K sanyo
2sc4644.pdf
Ordering number:EN3520PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA1784/2SC4644High Voltage Driver ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage (VCEO 400V).2064 Excellent linearity of hFE.[2SA17814/2SC4644]E : EmitterC : CollectorB : Base( ) : 2SA1784SANYO : N
8.3. Size:148K sanyo
2sc4646.pdf
Ordering number:EN3512B2SA1786 : PNP Epitaxial Planar Silicon Transistor2SC4646 : NPN Triple Diffused Planar Silicon Transistor2SA1786/2SC4646High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1786/2SC4646]E : EmitterC : CollectorB : Base( ) : 2SA1786SANYO : NMPSpe
8.4. Size:147K sanyo
2sc4645.pdf
Ordering number:EN3511A2SA1785 : PNP Epitaxial Planar Silicon Transistor2SC4645 : NPN Triple Diffused Planar Silicon Transistor2SA1785/2SC4645High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=1A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1785/2SC4645]E : EmitterC : CollectorB : Base( ) : 2SA1785SANYO : NMPSpe
8.5. Size:24K hitachi
2sc4643.pdf
2SC4643Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4643Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissip
8.6. Size:316K kexin
2sc4643.pdf
SMD Type TransistorsNPN Transistors2SC4643SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO
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